View IRF7521D1_196964.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD-91646C
PRELIMINARY
q q q q q
IRF7521D1
8
FETKYTM MOSFET / Schottky Diode
Co-packaged HEXFET(R) Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint
A A S G
1
K K D D
VDSS = 20V RDS(on) = 0.135 Schottky Vf = 0.39V
2
7
3
6
4
5
Description
T op V ie w
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. TM The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
TM
Micro8
TM
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Maximum
2.4 1.9 19 1.3 0.8 10 12 5.0 -55 to +150
Units
A
W mW/C V V/ns C
Thermal Resistance Ratings
Parameter
RJA Junction-to-Ambient
Maximum
100
Units
C/W
Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec.
www.irf.com
1
01/29/99
IRF7521D1
MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse RecoveryCharge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. 20 --- --- 0.70 2.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Min. --- --- --- --- --- Typ. --- 0.085 0.12 --- --- --- --- --- --- 5.3 0.84 2.2 5.7 24 15 16 260 130 61 Max. Units Conditions --- V VGS = 0V, ID = 250A 0.135 VGS = 4.5V, ID = 1.7A 0.20 VGS = 2.7V, ID = 0.85A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 0.85A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 125C 100 VGS = 12V nA -100 VGS = -12V 8.0 ID = 1.7A 1.3 nC VDS = 16V 3.3 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 1.7A ns --- RG = 6.0 --- RD = 5.7, --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 5
2
MOSFET Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Typ. Max. Units Conditions --- 1.3 A --- 14 --- 1.2 V TJ = 25C, IS = 1.7A, VGS = 0V 39 59 ns TJ = 25C, IF = 1.7A 37 56 nC di/dt = 100A/s
Schottky Diode Maximum Ratings
IF(av)
ISM
Max. Units. Conditions 1.9 50% Duty Cycle. Rectangular Wave, TA = 25C A See Fig.14 1.4 TA = 70C 120 5s sine or 3s Rect. pulse Following any rated 11 10ms sine or 6ms Rect. pulse load condition & A with VRRM applied Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR
Schottky Diode Electrical Specifications
VFM Parameter Max. Forward voltage drop
IRM Ct dv/dt
Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
www.irf.com
2 Power Mosfet Characteristics
100
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P
IRF7521D1
100
10
I , D rain-to-Source Current (A ) D
I , D ra in-to -S o urc e C u rren t (A ) D
10
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
1
1
1 .5V
0.1
0.1
0.01 0.1 1
1 .5V 20 s P U LS E W ID TH TJ = 2 5C A
10
0.01 0.1 1
2 0 s P U L S E W ID TH TJ = 15 0C A
10
V D S , D rain-to-S ourc e V oltage (V )
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 1.7A
I D , D ra in -to-S ourc e C urrent (A)
1.5
10
T J = 1 5 0 C T J = 2 5C
1.0
1
0.5
0.1 1.5 2.0 2.5
V DS = 10V 2 0 s P UL S E W ID TH
3.0 3.5 4.0
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 4.5 V
100 120 140 160
A
V G S , G ate-to -So urce Voltag e (V)
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7521D1
Power Mosfet Characteristics
500
400
-V G S , G ate-to-S ource V oltage (V )
V GS C is s C rs s C o ss
= = = =
0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd
10
I D = 1 .7A V D S = 16 V
8
C , Capacitance (pF)
C iss
300
C oss
6
200
4
C rss
100
2
0 1 10 100
A
0 0 2 4
FO R TE S T CIR C U IT S E E FIG U R E 9
6 8 10
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
I S D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
10
I D , Drain C urrent (A )
10 100s
T J = 1 50 C
1m s 1 10m s
1
T J = 25 C
0.1 0.4 0.6 0.8 1.0 1.2 1.4
V G S = 0V
1.6
A
0.1
T A = 25 C T J = 15 0C S ing le P u lse
0.1 1 10 100
1.8
A
V S D , S ourc e-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
4
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7521D1
Power Mosfet Characteristics
1000
Thermal Response (Z thJC )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
RDS (on) , Drain-to-Source On Resistance ()
1.0
0.12
0.8
RDS (on) , Drain-to-Source On Resistance ()
0.10
VGS = 2.5V
0.6
0.08
I D = 1.7A
0.4
0.06
0.2
V GS = 5.0V V = 4.0V
0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
A
0.04 0.0 2.0 4.0 6.0 8.0
A
I D , D rain C urrent (A)
V G S , Gate-to-Source Voltage (V)
Fig 10. Typical On-Resistance Vs. Drain Current
Fig 11. Typical On-Resistance Vs. Gate Voltage
www.irf.com
5
IRF7521D1
Schottky Diode Characteristics
10
100
10
TJ = 150C 125C
Reverse Current - IR (mA)
1
100C 75C 50C
0.1
In sta n tan e o us Fo rw a rd C urre nt - I F (A )
0.01
25C
0.001
0.0001 0 4 8 12 16 20
)
Reverse Voltage - V R (V)
1
T J = 1 50 C T J = 1 25 C T J = 2 5 C
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
A llow ab le A m b ient Tem p era ture - (C )
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3/4 = 1/2 = 1/3 = 1/4 = 1/5 DC V r = 20V R t hJA = 100C/W Square wave
0.1 0.0 0.2 0.4 0.6 0.8 1.0
Forwa rd VVotage D ro p -- V FM( (V ) Forward o lta ge Drop V F V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
A v era ge Forw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current
6
www.irf.com
IRF7521D1 Micro8TM Package Details
LE AD A SSIGN M EN TS D -B3 DDDD 8765 3 E -A1234 SSSG S 1 G 1 S2 G 2 8765 H 0.2 5 (.010) M A M S IN G LE 1234 D UAL 1234 D1 D1 D2 D2 8765
D IM A A1 B C D e e1 E H L INC H ES M IN .0 36 .0 04 .0 10 .005 .116 M AX .044 .008 .014 .007 .120 M ILLIME TE RS MIN 0 .91 0 .10 0 .25 0.13 2.95 M AX 1.11 0.20 0.36 0.18 3.05
.0256 B ASIC .0128 B ASIC .1 16 .188 .016 0 .120 .198 .026 6
0.65 BAS IC 0.33 BAS IC 2.95 4.78 0.4 1 0 3.0 5 5.03 0.66 6
e 6X e1 A -CB 8X 0.0 8 (.0 03) M A1 C AS BS 0.10 (.004) L 8X C 8X
RE C OM M E ND ED F O O TP RIN T 1.04 ( .0 41 ) 8X 0.38 8X ( .015 )
3.2 0 ( .126 )
4.2 4 5.2 8 ( .167 ) ( .2 08 )
N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H .
0.65 6X ( .02 56 )
Part Marking
www.irf.com
7
IRF7521D1
Micro8TM Tape & Reel
T E R M IN AL N U M B E R 1
12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
FE E D D IR E C TIO N
N OTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3 3 0 .0 0 (1 2 .9 9 2 ) MAX.
14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice . 01/99
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF7521D1

	To Download IRF7521D1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .